Package system for integrated circuits

ABSTRACT

A package system comprising a first interconnect structure arranged over a first surface of a first substrate; a plurality of first through silicon via (TSV) structures in and extending through the first substrate; a molding compound material surrounding the first substrate; at least one through via in the molding compound material with the through via being offset from the first substrate in a direction parallel to the first surface; a second interconnect structure over a second surface of the first substrate; and a first integrated circuit mounted over the first surface of the substrate, with the first integrated circuit being electrically coupled to at least one of the first TSV structures through the first interconnect structure and a connecting bump while the first interconnection structure is electrically coupled to the through via. The first interconnect structure may also be configured for mounting one or more integrated circuits and/or a second interposer on a surface opposite that of the first interposer.

PRIORITY CLAIM

The present application is a continuation of U.S. application Ser. No. 14/705,555, filed May 6, 2015, which is a continuation of U.S. application Ser. No. 12/787,661, filed May 26, 2010, now U.S. Pat. No. 9,048,233, issued Jun. 2, 2015, which are incorporated herein by reference in their entireties.

RELATED APPLICATIONS

The present application is related to U.S. application Ser. No. 12/781,960, filed May 18, 2010, now U.S. Pat. No. 8,866,301 on Oct. 21, 2014, and which is incorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates generally to the field of semiconductor package systems, and more particularly, to package systems having interposers.

BACKGROUND OF THE DISCLOSURE

Since the invention of integrated circuits, the semiconductor industry has experienced continual rapid growth due to continuous improvements in the integration density of various electronic components (i.e., transistors, diodes, resistors, capacitors, etc.). For the most part, this improvement in integration density has come from repeated reductions in minimum feature size, allowing for the integration of more components into a given area.

These integration improvements are essentially two-dimensional (2D) in nature, in that the volume occupied by the integrated components is essentially on the surface of the semiconductor wafer. Although dramatic improvements in lithography have resulted in considerable improvements in 2D integrated circuit formation, there are physical limits to the density that can be achieved in two dimensions. One of these limits is the minimum size needed to make these components. Also, when more devices are put into one chip, more complex designs are required.

An additional limitation comes from the significant increase in the number and length of interconnections between devices as the number of devices increases. When the number and length of interconnections increase, both circuit resistance-capacitance (RC) delay and power consumption increase.

Three-dimensional integrated circuits (3D IC) are therefore created to resolve the above-discussed limitations. In a conventional formation process of 3D IC, two wafers, each including an integrated circuit, are formed. The wafers are then bonded with the devices aligned. Deep vias are then formed to interconnect devices on the first and second wafers.

Much higher device density has been achieved using 3D IC technology, and up to six layers of wafers have been bonded. As a result, the total wire length is significantly reduced. The number of vias is also reduced. Accordingly, 3D IC technology has the potential of being the mainstream technology of the next generation.

Conventional methods for forming 3D IC also include die-to-wafer bonding, wherein separate dies are bonded to a common wafer. An advantageous feature of the die-to-wafer bonding is that the size of the dies may be smaller than the size of chips on the wafer.

Recently, through-silicon-vias (TSVs), also referred to as through-wafer vias, are increasingly used as a way of implementing 3D IC. Conventionally, a bottom wafer is bonded to a top wafer. Both wafers include integrated circuits over substrates. The integrated circuits in the bottom wafer are connected to the integrated circuits in the wafer through interconnect structures. The integrated circuits in the wafers are further connected to external pads through through-silicon-vias. The stacked wafers can be subjected to a sawing process to provide a plurality of stacked die structures.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detailed description when read with the accompanying figures. It is emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the numbers and dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a schematic cross-sectional view of a first exemplary package system.

FIG. 2 is a schematic cross-sectional view of a second exemplary package system.

FIG. 3 is a schematic cross-sectional view of a third exemplary package system.

FIG. 4 is a schematic cross-sectional view of a fourth exemplary package system.

FIG. 5 is a schematic cross-sectional view of a fifth exemplary package system.

FIGS. 6A-6E are schematic cross-sectional views illustrating an exemplary method of forming a plurality of interposers.

FIG. 7 is a schematic drawing illustrating a system including an exemplary package system disposed over a substrate board.

DETAILED DESCRIPTION OF THE DISCLOSURE

A package system has a silicon die directly disposed on an organic substrate that is disposed on a motherboard. The organic substrate serves as an intermediate apparatus to fan out the metal pitch of the silicon die to the metal pitch of the motherboard. It is found that a coefficient of thermal expansion (CTE) mismatch exists between the silicon die and the organic substrate. The CTE mismatch may result in an intermetal dielectric (IMD) layer delamination of the silicon die and/or a bump failure during an assembly process and/or a reliability test.

To solve the problem, a silicon interposer is disposed between the silicon die and the organic substrate, serving as another transition apparatus. The use of the silicon interposer increases the cost of manufacturing the package system. It is also found that the height of the package system with the silicon interposer is increased, too.

Based on the foregoing, package systems for integrated circuits are desired.

It is understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Moreover, the formation of a feature on, connected to, and/or coupled to another feature in the present disclosure that follows may include embodiments in which the features are formed in direct contact, and may also include embodiments in which additional features may be formed interposing the features, such that the features may not be in direct contact. In addition, spatially relative terms, for example, “lower,” “upper,” “horizontal,” “vertical,” “above,” “below,” “up,” “down,” “top,” “bottom,” etc., as well as derivatives thereof (e.g., “horizontally,” “downwardly,” “upwardly,” etc.) are used for ease of the present disclosure of one features relationship to another feature. The spatially relative terms are intended to cover different orientations of the device including the features.

Embodiments of the present application relate to package systems having various interposers. The interposers can each have a molding compound material disposed around side edges of a substrate. The molding compound material can provide a surface area such that a fine metallic line pitch of an interconnect structure disposed on a surface of the substrate can be fanned out to a large metallic line pitch of an interconnect structure disposed on an opposite surface of the substrate. By using the interposer, the organic substrate used in the conventional package system can be saved.

FIG. 1 is a schematic cross-sectional view of a first exemplary package system. In FIG. 1, a package system can include at least one integrated circuit, e.g., integrated circuits 120 and 130, disposed over an interposer 110. The integrated circuits 120 and 130 can be electrically coupled with the interposer 110.

The interposer 110 can include an interconnect structure 111. A substrate 113 can be disposed over the interconnect structure 111. The substrate 113 can include at least one through silicon via (TSV) structures, e.g., TSV structures 115 a and 115 b, therein. A molding compound material 117 can be disposed over the interconnect structure 111 and around the substrate 113. In some embodiments, the interposer 110 can include at least one passive device, e.g., capacitor, resistor, and/or inductor. In other embodiments, the interposer 110 can be substantially free from including any active device, e.g., metal-oxide-semiconductor (MOS) transistors, bipolar junction transistors (BJTs), complementary MOS (CMOS) transistors, etc.

In some embodiments, the interconnect structure 111 can include at least one dielectric layer and at least one electrical connection structure. In some embodiments, the interconnect structure 111 can include multiple dielectric layers and multiple layers of electrical connection structures. Each layer of the electrical connection structures can be sandwiched by the dielectric layers. In some embodiments, the dielectric layers and the conductive structures can be configured to form various passive devices, e.g., capacitors, resistors, and/or inductors.

In some embodiments, the dielectric layer (not labeled) may include at least one material, such as silicon oxide, silicon nitride, silicon oxynitride, low dielectric constant (low-k) dielectric material, ultra low-k dielectric material, another dielectric material, or any combinations thereof. The electrical connection structures can include at least one structure, such as via plugs, contact plugs, damascene structures, dual damascene structures, metallic regions, metallic lines, or any combinations thereof. The via plugs, contact plugs, damascene structures, dual damascene structures, metallic regions, and metallic lines (not labeled) can be made of at least one material, such as tungsten, aluminum, copper, titanium, tantalum, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, other proper conductive materials, and/or combinations thereof. In some embodiments, the interconnect structure 111 can have a dimension “D1” in the cross-sectional view shown in FIG. 1. The metallic lines of the interconnect structure 111 has a pitch width.

In some embodiments, the interconnect structure 111 can include at least one pad (not labeled) that can be disposed on a surface of the interconnect structure 111. At least one connector, e.g., bumps 135, can each be disposed over its corresponding pad for electrical connection with one or more substrates (not shown). The at least one pad may be made of at least one material, such as copper (Cu), aluminum (Al), aluminum copper (AlCu), aluminum silicon copper (AlSiCu), or other conductive material or various combinations thereof. In some embodiments, the at least one pad may include an under bump metallization (UBM) layer.

In some embodiments, the bumps 135 can include at least one material, such as a lead-free alloy (e.g., gold (Au), a tin/silver/copper (Sn/Ag/Cu) alloy, or other lead-free alloys), a lead-containing alloy (e.g., a lead/tin (Pb/Sn) alloy), copper, aluminum, aluminum copper, conductive polymer, other bump metal materials, or any combinations thereof.

As noted, the substrate 113 can be disposed over the interconnect structure 111. The substrate 113 can be made of an elementary semiconductor including silicon or germanium in crystal, polycrystalline, or an amorphous structure; a compound semiconductor including silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and indium antimonide; an alloy semiconductor including SiGe, GaAsP, AnnAs, AlGaAs, GaInAs, GaInP, and GaInAsP; any other suitable material; or combinations thereof. In one embodiment, the alloy semiconductor substrate may have a gradient SiGe feature in which the Si and Ge composition change from one ratio at one location to another ratio at another location of the gradient SiGe feature. In another embodiment, the alloy SiGe is formed over a silicon substrate. In another embodiment, a SiGe substrate is strained. Furthermore, the semiconductor substrate may be a semiconductor on insulator, such as a silicon on insulator (SOI). In some examples, the semiconductor substrate may include a doped epi layer or a buried layer. In other examples, the compound semiconductor substrate may have a multilayer structure, or the substrate may include a multilayer compound semiconductor structure.

The TSV structures 115 a and 115 b can be disposed in the substrate 113. The TSV structures 115 a and 115 b can be electrically coupled with the integrated circuits 120 and 130 through connectors, e.g., bumps 125 a and 125 b, respectively. In some embodiments, the TSV structures 115 a and 115 b can be made of at least one material, such as a barrier material (e.g., titanium, titanium-nitride, tantalum, tantalum-nitride, other barrier material, and/or any combinations thereof), conductive material (aluminum, copper, aluminum-copper, polysilicon, other conductive material, and/or any combinations thereof), other materials that are suitable for forming the TSV structures 115 a and 115 b, and/or combinations thereof.

Referring to FIG. 1, the molding compound material 117 can be disposed around the substrate 113. In some embodiments, the molding compound material 117 can be made of at least one material, such as a polymer-based material. The term “polymer” can represent thermosetting polymers, thermoplastic polymers, or any mixtures thereof. The polymer-based material can include, for example, plastic materials, epoxy resin, polyimide, PET (polyethylene terephthalate), PVC (polyvinyl chloride), PMMA (polymethylmethacrylate), polymer components doped with specific fillers including fiber, clay, ceramic, and inorganic particles, or any combinations thereof. In other embodiments, the molding compound material 117 can be made of epoxy resin, such as epoxy cresol novolac (ECN), biphenyl epoxy resin, multifunctional liquid epoxy resin, or any combinations thereof. In still other embodiments, the molding compound material 117 can be made of epoxy resin optionally including one or more fillers to provide the composition with any of a variety of desirable properties. Examples of fillers can be aluminum, titanium dioxide, carbon black, calcium carbonate, kaolin clay, mica, silica, talc, wood flour, or any combinations thereof.

In some embodiments, the interposer 110 can include another interconnect structure 119 disposed over the substrate 113. The TSV structures 115 a and 115 b can be electrically coupled with the integrated circuits 120 and 130 through the interconnect structure 119 and the bumps 125 a and 125 b. The interconnect structure 119 can include at least one dielectric layer, via plugs, contact plugs, damascene structures, dual damascene structures, metallic regions, metallic lines, passivation materials, other semiconductor materials, or any combinations thereof. In some embodiments, the dielectric layer and the conductive structures can be configured to form various passive devices, e.g., capacitors, resistors, and/or inductors.

The dielectric layer (not labeled) may include at least one material, such as silicon oxide, silicon nitride, silicon oxynitride, low-k dielectric material, ultra low-k dielectric material, other dielectric materials, or any combinations thereof. The via plugs, contact plugs, damascene structures, dual damascene structures, metallic regions, and metallic lines (not labeled) can be made of at least one material, such as tungsten, aluminum, copper, titanium, tantalum, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, other proper conductive materials, and/or combinations thereof.

In some embodiments, the bumps 125 a and 125 b can be made of at least one material, such as a lead-free alloy (such as gold (Au) or a tin/silver/copper (Sn/Ag/Cu) alloy), a lead-containing alloy (such as a lead/tin (Pb/Sn) alloy), copper, aluminum, aluminum copper, conductive polymer, other bump metal materials, and/or combinations thereof.

In some embodiments, the interconnect structure 119 can have a dimension “D2” in the cross-sectional view shown in FIG. 1. The dimension “D2” of the interconnect structure 119 is smaller than the dimension “D1” of the interconnect structure 111. In other embodiments, the metallic lines of the interconnect structure 119 has a pitch width. The metallic line pitch of the interconnect structure 119 can be smaller than the metallic line pitch of the interconnect structure 111. In an embodiment, the surface 117 a of the molding compound material 117 can be substantially level with the surface 119 a of the interconnect structure 119. In other embodiments, the surface 117 a of the molding compound material 117 can be lower or higher than the surface 119 a of the interconnect structure 119.

In some embodiments, the interconnect structure 119 can include at least one pad (not labeled) that can be disposed on a surface of the interconnect structure 119. The bumps 125 a and 125 b can each be disposed over its corresponding pad. In some embodiments, the pitch of the bumps 125 a and 125 b can be smaller than the pitch of the bumps 135. The at least one pad may comprise at least one material such as copper (Cu), aluminum (Al), aluminum copper (AlCu), aluminum silicon copper (AlSiCu), or other conductive material or various combinations thereof. In some embodiments, the at least pad may include an under bump metallization (UBM) layer.

Referring again to FIG. 1, at least one integrated circuit, e.g., the integrated circuits 120 and 130, can be disposed over the interposer 110. The integrated circuits 120 and 130 can include substrates 121 and 131, respectively. The substrates 121 and 131 can each be similar to the substrate 113 described above. In some embodiments, each coefficient of thermal expansion (CTE) of the substrates 121 and 131 can be substantially equal to the CTE of the substrate 113. The phrase “each coefficient of thermal expansion (CTE) of the substrates 121 and 131 can be substantially equal to the CTE of the substrate 113” can represent that the CTE mismatch between the substrates does not result in a low-k intermetal dielectric (IMD) layer delamination of the integrated circuits 120 and 130 and/or a bump failure of the bumps 125 a and 125 b during an assembly process and/or a reliability test. Though merely showing two integrated circuits disposed over the interposer 110, the scope of this application is not limited thereto. In some embodiments, a single integrated circuit or more than two integrated circuits can be horizontally separated and/or vertically stacked over the interposer 110.

In FIG. 1, the integrated circuits 120 and 130 can each include an interconnect structure (not labeled) disposed between the substrates 121, 131 and bumps 125 a, 125 b, respectively. The integrated circuits 120 and 130 can each include various active devices. In some embodiments, the interconnect structures of the integrated circuits 120 and 130 can each be similar to the interconnect structure 111 or 119 described above. In some embodiments, the metallic lines of the interconnect structures of the integrated circuits 120 and 130 can have a pitch width. The metallic line pitch of the integrated circuits 120 and 130 can be smaller than the metallic line pitch of the interconnect structure 119. In other embodiments, the metallic line pitch of at least one of the integrated circuits 120 and 130 can be substantially equal to the metallic line pitch of the interconnect structure 119.

In some embodiments, the interconnect structures of the integrated circuits 120 and 130 can each include at least one pad (not labeled) that can be disposed on a surface of the interconnect structure. The bumps 125 a and 125 b can each be electrically coupled with its corresponding pad. The at least one pad may comprise at least one material such as copper (Cu), aluminum (Al), aluminum copper (AlCu), aluminum silicon copper (AlSiCu), or other conductive material or various combinations thereof. In some embodiments, the at least pad may include an under bump metallization (UBM) layer.

As noted, the interposer 110 can have a fine metallic line pitch on the interconnect structure 119 and a large metallic line pitch on the interconnect structure 111. The interposer 110 can fan out the pitch of the bumps 125 a and 125 b to the pitch of the bumps 135 through the interconnect structure 119, the TSV structures 115 a, 115 b, and the interconnect structure 111. Since the interconnect structure 111 has a larger dimension “D1” than the dimension “D2” of the interconnect structure 119, the interconnect structure 111 can have more bumps 135 and accommodate more pin counts thereon.

It is also noted that since each CTE of the substrates 121 and 131 is substantially equal to the CTE of the substrate 113, the CTE mismatch among the substrates 121, 131, and 113 can be reduced. In some embodiments, the package system 100 can be free from including any organic substrate that acts as an intermediate transformer between a motherboard and a die of a conventional package system. The cost of using the conventional organic substrate can be thus reduced. The concern resulting from the organic substrate and the substrate of the die can also be eliminated.

FIG. 2 is a schematic cross-sectional view of a second exemplary package system. Items of FIG. 2 that are the same or similar items in FIG. 1 are indicated by the same reference numerals, increased by 100. In FIG. 2, a package system 200 can include a molding compound layer 218 disposed between an interconnect structure 211 and a substrate 213. TSV structures 215 a and 215 b are disposed through the molding compound layer 218 for electrically coupling the interconnect structure 211.

Though divided by the TSV structures 215 a and 215 b as shown in the cross-sectional view of FIG. 2, in some embodiments, the molding compound layer 218 can continuously extend from the left molding compound material 217 to the right molding compound material 217 in a top view of the package system 200. The molding compound layer 218 can be made of at least one material that is the same or similar to the molding compound material 117 described above in conjunction with FIG. 1.

FIG. 3 is a schematic cross-sectional view of a third exemplary package system. Items of FIG. 3 that are the same or similar items in FIG. 1 are indicated by the same reference numerals, increased by 200. In FIG. 3, a portion of an interconnect structure 319 can extend over at least a portion of a molding compound material 317. The molding compound material 317 can include at least one through via structure, e.g., through via structures 315 c, therein. The through via structures 315 c can be made of at least one material that is the same or similar to that of the TSV structures 115 a and 115 b described above in conjunction with FIG. 1. The interconnect structure 319 can be at least partially electrically coupled with an interconnect structure 311 through the through via structures 315 c.

By extending the interconnect structure 319 at least partially over the molding compound material 317, the dimension and/or area of the interconnect structure 319 can be increased. The interconnect structure 319 can accommodate larger and/or more integrated circuits thereover. The package capacity of the package system 300 can thus be increased. In some embodiments, the molding compound layer 218 (shown in FIG. 2) can be disposed between the interconnect structure 311 and the substrate 313.

FIG. 4 is a schematic cross-sectional view of a fourth exemplary package system. Items of FIG. 4 that are the same or similar items in FIG. 2 are indicated by the same reference numerals, increased by 200, respectively. In FIG. 4, another interposer 440 can be disposed between an interposer 410 and an integrated circuit 420.

In some embodiments, the interposer 440 can include a substrate 441 that is disposed between interconnect structures (not labeled). The interconnect structures of the interposer 440 can have the same or similar dimensions. In other embodiments, the interposer 440 can have the same or similar structure of the interposer 110 described above in conjunction with FIG. 1.

In some embodiments, the substrate 441 can include at least one TSV structure (not labeled). Connectors, e.g., bumps 445, can be electrically coupled with bumps 425 a through the interposer 440. The substrate 441, the interconnect structures, and the TSV structures can be made of the same or similar materials of the substrate 113, the interconnect structure 119, and the TSV structures 115 a, 115 b, respectively, described above in conjunction with FIG. 1.

By disposing the interposer 440 between the interposer 410 and the integrated circuit 420, the pitch of the bumps 445 can be fanned out to the pitch of the pumps 435 through the interposers 440 and 410. The CTE mismatch of the integrated circuit 420 and the interposer 410 may be further reduced. In some embodiments, the interconnect structure 419 can extend at least partially over the molding compound material 417 as shown in FIG. 3. The molding compound material 417 can include through via structures 315 c shown in FIG. 3.

FIG. 5 is a schematic cross-sectional view of a fifth exemplary package system. Items of FIG. 5 that are the same or similar items in FIG. 4 are indicated by the same reference numerals, increased by 100. In FIG. 5, an interconnect structure 550 can be disposed between a substrate 513 and an interconnect structure 511. In some embodiments, the interconnect structure 550 can be made of the same or similar material of the interconnect structure 519. In other embodiments, the metallic line pitch of the interconnect structure 550 can be substantially equal to the metallic line pitch of the interconnect structure 519. The metallic line pitch of the interconnect structure 550 is then fanned out to the metallic line pitch of an interconnect structure 511. In still other embodiments, the metallic line pitch of the interconnect structure 550 is larger than the metallic line pitch of the interconnect structure 519 and is smaller than the metallic line pitch of the interconnect structure 511.

In some embodiments, the interconnect structure 519 can extend at least partially over the molding compound material 517 in the manner as interconnect structure 319 shown in FIG. 3. The molding compound material 517 can include through via structures 315 c shown in FIG. 3. In other embodiments, the interconnect structure 550 can also extend such that edges of the interconnect structure 550 adjacent the molding compound material 517 can be substantially aligned with edges of the interconnect structure 519.

FIGS. 6A-6E are schematic cross-sectional views illustrating an exemplary method of forming a plurality of interposers. Items of FIGS. 6A-6E that are the same or similar items in FIG. 1 are indicated by the same reference numerals, increased by 500. In FIG. 6A, a method of forming a plurality of interposers can include disposing a plurality of substrates 613 over a carrier 650, e.g., a glass substrate. The substrates 613 are separated from each other by spaces 660. In some embodiments, the substrates 613 can be attached on an adhesive layer 655 that is disposed over the carrier 650. The adhesive layer 655 can include a material such as a thermosetting resin to facilitate connection between the carrier 650 and the substrates 613.

In some embodiments, each substrate 613 can include a plurality of TSV structures (not labeled). In other embodiments, a plurality of interconnect structures 619 can each be disposed between the corresponding substrate 613 and the carrier 650. The interconnect structures 619 and the TSV structures can be formed before being disposed over the carrier 650. In some embodiments, the interconnect structures 619 and the TSV structures can be made by at least one of deposition processes, photolithographic processes, etch processes, chemical-mechanical polish (CMP) processes, cleaning process, other semiconductor processes, or any combinations thereof.

Referring to FIG. 6B, a molding compound material 617 can be formed in the spaces 660. In some embodiments, the molding compound material 617 is formed such that the surface (not labeled) of the molding compound material 617 can be substantially level with the surfaces of the substrate 617. In other embodiments, the molding compound material 617 can be formed, covering the substrates 613.

In some embodiments, a liquid or viscous molding compound can be applied in the spaces 660 and over the substrates 617 by any applicable equipment or methods. The portion of the liquid or viscous molding compound that is over the substrates 617 can be removed so as to form the molding compound material 617 in the spaces 660. In still other embodiments, after removing the portion of the molding compound, the liquid or viscous molding compound can be cured and/or hardened by any applicable thermal curing technique.

Referring to FIG. 6C, a plurality of interconnect structures 611 and bumps 635 can be formed over the substrates 613. Each of the interconnect structures 611 can be formed over the corresponding substrate 613. The bumps 635 can be electrically coupled with the TSV structures of the substrates 613 through the interconnect structures 611. The interconnect structures 611 can be formed, for example, by at least one of deposition processes, photolithographic processes, etch processes, chemical-mechanical polish (CMP) processes, cleaning process, other known semiconductor processes, or any combinations thereof.

In some embodiments, a plurality of pads (not labeled) can be formed between the interconnect structures 611 and the bumps 635. In other embodiments, the pads can be optionally subjected to an electroless nickel immersion gold (ENIG) process or an immersion tin (Im-Sn) process for forming ENIG or Im-Sn material on the exposed surfaces of the pads. The ENIG or Im-Sn material can serve as a bonding interface between the pads and the bumps 635.

Referring to FIG. 6D, the carrier 650 (shown in FIG. 6C) can be removed from the substrates 613. In some embodiments, removing the carrier 650 can include removing the adhesive layer 655 that is disposed between the substrates 613 and the carrier 650. Removing the adhesive layer 655 can include a thermal process, a wet etch process, a dry etch process, other applicable processes for removing the adhesive layer 655, or any combinations thereof.

Referring to FIG. 6E, the structure shown in FIG. 6D can be subjected to a dicing process for dividing interposers 610. In some embodiments, the dicing process can include a blade sawing process and/or a laser sawing process. The dicing process can be performed along portions of the molding compound material 617 that is disposed in the spaces 660 (shown in FIG. 6A). After the dicing process, the molding compound material 617 can be formed and disposed around each of the substrates 613.

In some embodiments, at least one integrated circuit (not shown) can be disposed over each interposer 610 to form any package system described above in conjunction with FIGS. 1-5. It is noted that the number of the interposers 610 formed by the method described above in conjunction with FIGS. 6A-6E are merely exemplary. In some embodiments, more interposers 610 can be formed. It is also noted that the method described above in conjunction with FIGS. 6A-6E can be modified to achieve the interposers 210-510 described above in conjunction with FIGS. 2-5, respectively.

FIG. 7 is a schematic drawing illustrating a system including an exemplary package system disposed over a substrate board. In FIG. 7, a system 700 can include a package system 702 disposed over a substrate board 701. The substrate board 701 can include a printed circuit board (PCB), a printed wiring board and/or other carrier that is capable of carrying a package system. The package system 702 can be similar to one of the package system 100-500 described above in conjunction with FIGS. 1-5, respectively. The package system 702 can be electrically coupled with the substrate board 701. In some embodiments, the package system 702 can be electrically and/or thermally coupled with the substrate board 701 through bumps 705. The system 700 can be part of an electronic system such as displays, panels, lighting systems, auto vehicles, entertainment devices, or the like. In some embodiments, the system 700 including the package system 702 can provides an entire system in one IC, so-called system on a chip (SOC) or system on integrated circuit (SOIC) devices.

In some embodiments, a package system comprises a first interconnect structure arranged over a first surface of a first substrate; a plurality of first through silicon via (TSV) structures in and extending through the first substrate; a molding compound material surrounding the first substrate; at least one through via in the molding compound material with the through via being offset from the first substrate in a direction parallel to the first surface; a second interconnect structure over a second surface of the first substrate; and a first integrated circuit mounted over the first surface of the substrate, with the first integrated circuit being electrically coupled to at least one of the first TSV structures through the first interconnect structure and a connecting bump while the first interconnection structure is electrically coupled to the through via.

In some embodiments, a package system comprises a first interposer including a first substrate having first and second primary surfaces with the first and second primary surfaces being on opposite sides of the first substrate with secondary or peripheral surfaces extending between the primary surfaces, and a first coefficient of thermal expansion (CTE₁); a first interconnect structure arranged over the first surface, the first interconnect structure having a first metallic line pitch LP₁; a plurality of first through silicon via (TSV) structures in the first substrate; a molding compound material partially encompasses the first substrate and covers both the second primary surface and the secondary surfaces with a plurality of through vias extending through the molding compound material, the through vias being parallel to the first TSV structures and offset from the secondary surfaces in a direction away from the first substrate; a second interconnect structure over a second surface of the first substrate having a second metallic line pitch LP₂, with LP₂ being larger than LP₁, and a first integrated circuit arranged over the first interposer and electrically coupled with a first set of the first TSV structures through the first interconnect structure and at least one connecting bump.

In some embodiments, a package system comprises a first interposer having a first substrate with first and second primary surfaces, the first and second primary surfaces being on opposite sides of the first substrate, and a plurality of first through silicon via (TSV) structures extending through the substrate; a first interconnect structure over the first surface; a second interconnect structure over the second surface; a molding compound material extending between the first interconnect structure and the second interconnect structure with a plurality of through vias extending through the molding compound material and electrically coupled to at least one of the first and second interconnect structures; and a second interposer over a portion of the first interposer, the second interposer including a second substrate having third and fourth primary surfaces, the third and fourth primary surfaces being on opposite sides of the second substrate, and a plurality of second through silicon via (TSV) structures extending through the second substrate; a third interconnect structure over the third surface; a fourth interconnect structure over the fourth surface, with the third and fourth interconnect structures being electrically coupled through a first set of second TSV structures and with the second interposer being electrically coupled with the first interposer through the fourth interconnect structure.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A package system comprising: a first substrate; a first interconnect structure over a first surface of the first substrate; a plurality of first through silicon via (TSV) structures in the first substrate; a molding compound material surrounding the first substrate; a through via in the molding compound material, wherein the through via is offset from the first substrate in a direction parallel to the first surface; a second interconnect structure on a second surface of the first substrate opposite the first interconnect structure; and a first integrated circuit over the first surface of the first substrate, wherein the first integrated circuit is electrically coupled to at least a first TSV structure of the plurality of first TSV structures by the first interconnect structure and a connecting bump, and wherein the first interconnect structure is electrically coupled to the through via.
 2. The package system according to claim 1, wherein: the first substrate has a first coefficient of thermal expansion (CTE₁); the first integrated circuit has a second coefficient of thermal expansion (CTE₂); and CTE₁ and CTE₂ are substantially equal.
 3. The package system according to claim 2, further comprising: a second integrated circuit over the first substrate, the second integrated circuit having a third coefficient of thermal expansion (CTE₃); wherein the second integrated circuit is electrically coupled with at least a second TSV structure of the plurality of first TSV structures, and CTE₁ and CTE₃ are substantially equal.
 4. The package system according to claim 1, wherein: the molding compound material has a first surface facing the first integrated circuit, and a second surface opposite the first surface, the first interconnect structure has a first surface facing the first integrated circuit, the first surface of the molding compound material is coplanar with the first surface of the first interconnect structure, and the second surface of the molding compound material is coplanar with a surface of each TSV structure of the plurality of first TSV structures.
 5. The package system according to claim 1, wherein: the first interconnect structure has a first metallic line pitch LP₁; the second interconnect structure has a second metallic line pitch LP₂ greater than LP₁.
 6. The package system according to claim 1, wherein: the through via is electrically coupled to both the first interconnect structure and the second interconnect structure.
 7. The package system according to claim 1, wherein: the molding compound material includes a spacing region between the second interconnect structure and the second surface of the first substrate; and wherein the plurality of first TSV structures extend through the spacing region.
 8. The package system according to claim 1, further comprising: an interposer between the first integrated circuit and the first substrate, wherein the interposer comprises a plurality of second TSV structures, and wherein at least one second TSV structure of the plurality of second TSV structures is electrically coupled with both the first integrated circuit and at least one first TSV structure of the plurality of first TSV structures.
 9. The package system according to claim 5, further comprising: a third interconnect structure between the second surface of the first substrate and the second interconnect structure.
 10. The package system according to claim 9, wherein: the third interconnect structure has a third metallic line pitch LP₃, and further wherein LP₂>LP₃>LP₁.
 11. A package system comprising: a first interposer including: a first substrate having first and second primary surfaces, the first and second primary surfaces being on opposite sides of the first substrate with secondary surfaces extending between the primary surfaces, and the first substrate has a first coefficient of thermal expansion (CTE₁); a first interconnect structure over the first surface, the first interconnect structure having a first metallic line pitch LPi; a plurality of first through silicon via (TSV) structures in the first substrate; a molding compound material partially enveloping the first substrate and covering both the second primary surface and the secondary surfaces; a plurality of through vias in the molding compound material, wherein each through via of the plurality of through vias are parallel to each first TSV structure of the plurality of first TSV structures and each through via of the plurality of through vias is offset from the secondary surfaces in a direction away from the first substrate; a second interconnect structure on a second surface of the first substrate opposite the first interconnect structure, wherein the second interconnect structure has a second metallic line pitch LP₂, wherein LP₂>LP₁; and a first integrated circuit over the first interposer and electrically coupled with a first set of first TSV structures of the plurality of first TSV structures through the first interconnect structure and at least one connecting bump.
 12. The package system according to claim 11, wherein: the first integrated circuit has a second coefficient of thermal expansion (CTE₂), and CTE₁ and CTE₂ are substantially equal.
 13. The package system according to claim 12, further comprising: a second integrated circuit vertically above a second region of the first interposer, wherein the second integrated circuit is electrically coupled with at least a second set of first TSV structures of the plurality of first TSV structures, and wherein the second integrated circuit comprises a third substrate having a third coefficient of thermal expansion (CTE₃), and CTE₁, CTE₂, and CTE₃, are substantially equal.
 14. The package system according to claim 13, wherein: at least one first TSV structure of the plurality of first TSV structures is included in both the first set of first TSV structures and the second set of first TSV structures.
 15. The package system according to claim 11, wherein: a first set of through vias of the plurality of through vias is electrically coupled to a peripheral portion of the first interconnect structure, the peripheral portion extending beyond the first surface of the substrate and over a portion of the molding compound material.
 16. The package system according to claim 11, further comprising: a second interposer comprising a second set of TSV structures over the first interposer, wherein the first integrated circuit is electrically coupled with the first set of first TSV structures through the second set of TSV structures, the first interconnect structure, and a connecting bump.
 17. A package system comprising: a first interposer comprising; a first substrate having first and second primary surfaces, the first and second primary surfaces being on opposite sides of the first substrate, and a plurality of first through silicon via (TSV) structures; a first interconnect structure over the first primary surface; a second interconnect structure on the second primary surface; a molding compound material extending between the first interconnect structure and the second interconnect structure, a plurality of through vias extending through the molding compound material and electrically coupled to at least one of the first interconnect structure or the second interconnect structure; and a second interposer over a portion of the first interposer, the second interposer comprising; a second substrate having third and fourth primary surfaces, the third and fourth primary surfaces being on opposite sides of the second substrate, and a plurality of second through silicon via (TSV) structures; a third interconnect structure over the third primary surface; a fourth interconnect structure on the fourth primary surface, the third and fourth interconnect structures being electrically coupled through a first set of second TSV structures of the plurality of second TSV structures; wherein the second interposer is electrically coupled with the first interposer through the fourth interconnect structure.
 18. The package system according to claim 17, further comprising: a first integrated circuit over the third interconnect structure and electrically coupled to the second interconnect structure through a first set of first TSV structures of the plurality of first TSV structures.
 19. The package system according to claim 18, further comprising: a second integrated circuit over the first interconnect structure and electrically coupled to the second interconnect structure through a second set of first TSV structures of the plurality of first TSV structures.
 20. The package system according to claim 19, wherein: each first TSV structure of the first set of first TSV structures is different from each first TSV structure of the second set of first TSV structures. 